The driving force of the evolution of Microelectronics is the diminution of the dimensions (Moore's law). One striking example of this miniaturisation is the development of the actual microprocessors and memories. At the moment, the critical dimensions of the integrated circuits are in the range of 100 nm. The roadmap of the SIA (Semiconductors Industry Association) predicts that the critical dimensions will reach 50 nm in 2010. Below this number, no further guesses are made. This is because at these dimensions, the Moore's law cannot be applied anymore. Fundamental limits (for example, quantum effects) are reached and other aspects such as power dissipation or production costs must also be taken into account.

In parallel with this tendency, an extensive research activity has grown in the field of Nanotechnology during the last years. The objective is the development of technologies to fabricate, characterize and use structures with dimensions ranging from the atomic scale to 100 nanometers. The development of Nanotechnology implies the creation of a new body of knowledge resulting in the availability of a set of new tools, nanostructures and methods. This technology will allow the fabrication of new nanometric devices either by miniaturization of the classical techniques (top-down approach) or by using basic building blocks (molecules or atoms, bottom-up approach).

Objectives of the symposim

The main objective of the Symposium is to analyze the present situation concerning the miniaturization in microelectronics in order to determine how its future evolution will be influenced by the new concepts and techniques of Nanotechnology. To achieve this objective, the Symposium will gather internationally recognized experts from the Microelectronics field as well as from the Nanotechnology field. The Symposium will be the opportunity to see the different point of views (complementary and/or contradictory) emerging from both areas.

The Symposium duration is of 2 days. A series of talks, alternating Microelectronics-related contents with Nanotechnology-related contents, are proposed to offer a complete view of the situation. The seminar will end with a round table to discuss the most relevant aspects raised during the talks. As an example, a discussion subject will be whether the future evolution of the miniaturization in microelectronics will be based on the new kind of structures that are used in the present CMOS technology or if it will be absolutely necessary to incorporate and develop new and alternative concepts, ideas and methods.

Specifically, the following actions will be undertaken during the Symposium:

• The 'state of the art' of Microelectronics will be presented (dimensions, Integration density, materials, economical aspects, new applications).
• The evolution of Microelectronics will be revised. Special emphasis will be done on the determination of the fundamental, technological and economical limits of the miniaturization tendency.
• An overview of the potential tools, techniques and concepts originated from Nanotechnology will be presented.
• The possibilities of Nanotechnology as a complement or alternative to Microelectronics technologies will be analyzed.